inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB727 description high dc current gain- : h fe = 1000(min)@ i c = - 3a collector-emitter breakdown voltage- : v (br)ceo = -120v(min) low collector-emitter saturation voltage- : v ce(sat) = -1.5v(max)@ i c = - 3a complement to type 2sd768 applications medium speed and power switching applications . absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -7 v i c collector current-continuous -6 a i cm collector current-peak -10 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB727 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -25ma, r be = -120 v v (br)ebo emitter-base breakdown voltage i e = -50ma, i c = 0 -7 v v ce( sat )-1 collector-emitter saturation voltage i c = -3a, i b = -6ma b -1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = -6a, i b = -60ma b -3.0 v v be( sat )-1 base-emitter saturation voltage i c = -3a, i b = -6ma b -2.0 v v be( sat )-2 base-emitter saturation voltage i c = -6a, i b = -60ma b -3.5 v i cbo collector cutoff current v cb = -120v, i e = 0 -100 a i ceo collector cutoff current v ce = -100v; r be = -10 a h fe dc current gain i c = -3a; v ce = -3v 1000 20000 switching times t on turn-on time 1.0 s t off turn-off time i c = -3a; i b1 = -i b2 = -6ma 3.0 s isc website www.iscsemi.cn
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